Recently added

Modelling ultra-fast threshold voltage instabilities in Hf-based ferroelectrics

O'Sullivan, Barry; Truijen, Brecht; Putcha, Vamsi; Grill, Alexander; Vaisman Chasin, Adrian; Van den Bosch, Geert; Kaczer, Ben; Alam, Md Nur Kutubul; Van Houdt, Jan (2022)

Low thermal budget PBTI and NBTI reliability solutions for multi-V-th CMOS RMG stacks based on atomic oxygen and hydrogen treatments

Franco, Jacopo; Arimura, Hiroaki; de Marneffe, Jean-Francois; Claes, Dieter; Brus, Stephan; Vandooren, Anne; Dentoni Litta, Eugenio; Horiguchi, Naoto; Croes, Kristof; Kaczer, Ben (2022)

Low temperature source / drain epitaxy and functional silicides: essentials for ultimate contact scaling

Porret, Clément; Everaert, Jean-Luc; Schaekers, Marc; Ragnarsson, Lars-Ake; Hikavyy, Andriy; Rosseel, Erik; Rengo, Gianluca; Loo, Roger; Khazaka, R.; Givens, M.; Piao, Xiaoyu; Mertens, Sofie; Heylen, Nancy; Mertens, Hans; Toledo de Carvalho Cavalcante, Camila; Sterckx, Gunther; Brus, Stephan; Nalin Mehta, Ankit; Korytov, Maxim; Batuk, Dmitry; Favia, Paola; Langer, Robert; Pourtois, Geoffrey; Swerts, Johan; Dentoni Litta, Eugenio; Horiguchi, Naoto (2022)

JPEG Pleno light field: current standard and future directions

Perra, Cristian; Saeed, Mahmoudpour; Pagliari, Carla (2022)

Interpretation and modelling of dynamic-R-ON kinetics in GaN-on-Si HEMTs for mm-wave applications

Putcha, Vamsi; Yu, Hao; Franco, Jacopo; Yadav, Sachin; Alian, AliReza; Peralagu, Uthayasankaran; Parvais, Bertrand; Collaert, Nadine (2022)

Insights into Scaled Logic Devices Connected from Both Wafer Sides

Veloso, Anabela; Eneman, Geert; Matagne, Philippe; Vermeersch, Bjorn; Jourdain, Anne; Arimura, Hiroaki; O'Sullivan, Barry; Chen, Rongmei; De Keersgieter, An; Simoen, Eddy; Radisic, Dunja; Oniki, Yusuke; Lafitte, A.; Brus, Stephan; Beyne, Eric; Dentoni Litta, Eugenio; Horiguchi, Naoto (2022)

Innovations in Transistor Architecture and Device Connectivity for Advanced Logic Scaling

Veloso, Anabela; Eneman, Geert; De Keersgieter, An; Favia, Paola; Hikavyy, Andriy; Chen, Rongmei; Jourdain, Anne; Horiguchi, Naoto (2022)

Influence of Drain and Gate Potential on Gate Failure in Semi-Vertical GaN-on-Si Trench MOSFETs

Favero, D.; De Santi, C.; Mukherjee, K.; Geens, Karen; Borga, Matteo; Bakeroot, Benoit; You, Shuzhen; Decoutere, Stefaan; Meneghesso, G.; Zanoni, E.; Meneghini, M. (2022)

III-V HBTs on 300 mm Si substrates using merged nano-ridges and its application in the study of impact of defects on DC and RF performance

Vais, Abhitosh; Yadav, Sachin; Mols, Yves; Vermeersch, Bjorn; Vondkar Kodandarama, Komal; Baryshnikova, Marina; Mannaert, Geert; Alcotte, Reynald; Boccardi, Guillaume; Wambacq, Piet; Parvais, Bertrand; Langer, Robert; Kunert, Bernardette; Collaert, Nadine (2022)

High-precision optical constants characterization of materials in the EUV spectral range: From large research facilities to laboratory-based instruments

Soltwisch, V.; Glabisch, S.; Andrle, A.; Philipsen, Vicky; Saadeh, Q.; Schroder, S.; Lohr, L.; Ciesielski, R.; Brose, S. (2022)

High performance La-doped HZO based ferroelectric capacitors by interfacial engineering

Popovici, Mihaela Ioana; Bizindavyi, Jasper; Favia, Paola; Clima, Sergiu; Alam, Md Nur Kutubul; Ramachandran, R. K.; Walke, Amey; Celano, Umberto; Leonhardt, A.; Mukherjee, Shankha; Richard, Olivier; Illiberi, A.; Givens, M.; Delhougne, Romain; Van Houdt, Jan; Kar, Gouri Sankar (2022)

Gate Reliability of p-GaN Power HEMTs Under Pulsed Stress Condition

Millesimo, M.; Bakeroot, Benoit; Borga, Matteo; Posthuma, Niels; Decoutere, Stefaan; Sangiorgi, E.; Fiegna, C.; Tallarico, A. N. (2022)

Forksheet FETs with Bottom Dielectric Isolation, Self-Aligned Gate Cut, and Isolation between Adjacent Source-Drain Structures

Mertens, Hans; Ritzenthaler, Romain; Oniki, Yusuke; Puttarame Gowda, Pallavi; Mannaert, Geert; Sebaai, Farid; Hikavyy, Andriy; Rosseel, Erik; Dupuy, Emmanuel; Peter, Antony; Vandersmissen, Kevin; Radisic, Dunja; Briggs, Basoene; Batuk, Dmitry; Geypen, Jef; Martinez Alanis, Gerardo Tadeo; Seidel, Felix; Richard, Olivier; Chan, BT; Mitard, Jerome; Dentoni Litta, Eugenio; Horiguchi, Naoto (2022)

First demonstration of field-free perpendicular SOT-MRAM for ultrafast and high-density embedded memories

Cai, Kaiming; Talmelli, Giacomo; Fan, Kaiquan; Van Beek, Simon; Kateel, Vaishnavi; Gupta, Mohit; Gama Monteiro Junior, Maxwel; Ben Chroud, Mohamed; Jayakumar, Ganesh; Trovato, Anna; Rao, Siddharth; Kar, Gouri Sankar; Couet, Sebastien (2022)

FinFETs with Thermally Stable RMG Gate Stack for Future DRAM Peripheral Circuits

Capogreco, Elena; Arimura, Hiroaki; Ritzenthaler, Romain; Brus, Stephan; Oniki, Yusuke; Dupuy, Emmanuel; Sebaai, Farid; Radisic, Dunja; Chan, BT; Zhou, Daisy; Machkaoutsan, V.; Yoon, S.; Itokawa, H.; Yamaguchi, M.; Gao, Z.; Fazan, P.; Chen, Y.; Subramanian, Sujith; Ragnarsson, Lars-Ake; Spessot, Alessio; Dentoni Litta, Eugenio (2022)

Evaluation of a Morphable Anthropomorphic Articulated Total Body Model

Pascoletti, Giulia; Huysmans, Toon; Conti, Paolo; Zanetti, Elisabetta M. (2022)

Evaluating Forksheet FET Reliability Concerns by Experimental Comparison with Co-integrated Nanosheets

Bury, Erik; Vaisman Chasin, Adrian; Kaczer, Ben; Vandemaele, M.; Tyaginov, S.; Franco, Jacopo; Ritzenthaler, Romain; Mertens, Hans; Weckx, Pieter; Horiguchi, Naoto; Linten, Dimitri (2022)

Degradation mapping of IGZO TFTs

Rinaudo, P.; Vaisman Chasin, Adrian; Franco, Jacopo; Wu, Zhicheng; Rassoul, Nouredine; Delhougne, Romain; Kaczer, Ben; De Wolf, Ingrid; Kar, Gouri Sankar (2022)

Characterizing and Modelling of the BTI Reliability in IGZO-TFT using Light-assisted I-V Spectroscopy

Wu, Zhicheng; Vaisman Chasin, Adrian; Franco, Jacopo; Subhechha, Subhali; Dekkers, Harold; Yengula Venkata Ramana, Bhuvaneshwari; Belmonte, Attilio; Rassoul, Nouredine; van Setten, Michiel; Afanas'ev, V.; Delhougne, Romain; Kaczer, Ben; Kar, Gouri Sankar (2022)

Assessment of Transistor Aging Models in a 28nm CMOS Technology at a Wide Range of Stress Conditions

Sangani, Dishant; Diaz Fortuny, Javier; Bury, Erik; Kaczer, Ben; Gielen, G. (2022)

imec Publications: Recent submissions

Modelling ultra-fast threshold voltage instabilities in Hf-based ferroelectrics ﻿

Low thermal budget PBTI and NBTI reliability solutions for multi-V-th CMOS RMG stacks based on atomic oxygen and hydrogen treatments ﻿

Low temperature source / drain epitaxy and functional silicides: essentials for ultimate contact scaling ﻿

JPEG Pleno light field: current standard and future directions ﻿

Interpretation and modelling of dynamic-R-ON kinetics in GaN-on-Si HEMTs for mm-wave applications ﻿

Insights into Scaled Logic Devices Connected from Both Wafer Sides ﻿

Innovations in Transistor Architecture and Device Connectivity for Advanced Logic Scaling ﻿

Influence of Drain and Gate Potential on Gate Failure in Semi-Vertical GaN-on-Si Trench MOSFETs ﻿

III-V HBTs on 300 mm Si substrates using merged nano-ridges and its application in the study of impact of defects on DC and RF performance ﻿

High-precision optical constants characterization of materials in the EUV spectral range: From large research facilities to laboratory-based instruments ﻿

High performance La-doped HZO based ferroelectric capacitors by interfacial engineering ﻿

Gate Reliability of p-GaN Power HEMTs Under Pulsed Stress Condition ﻿

Forksheet FETs with Bottom Dielectric Isolation, Self-Aligned Gate Cut, and Isolation between Adjacent Source-Drain Structures ﻿

First demonstration of field-free perpendicular SOT-MRAM for ultrafast and high-density embedded memories ﻿

FinFETs with Thermally Stable RMG Gate Stack for Future DRAM Peripheral Circuits ﻿

Evaluation of a Morphable Anthropomorphic Articulated Total Body Model ﻿

Evaluating Forksheet FET Reliability Concerns by Experimental Comparison with Co-integrated Nanosheets ﻿

Degradation mapping of IGZO TFTs ﻿

Characterizing and Modelling of the BTI Reliability in IGZO-TFT using Light-assisted I-V Spectroscopy ﻿

Assessment of Transistor Aging Models in a 28nm CMOS Technology at a Wide Range of Stress Conditions ﻿