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Characterisation of 2% mismatched InGaAs layers, grown on different bufferlayers and at different growth temperatures

dc.contributor.authorD'Hondt, Mark
dc.contributor.authorMoerman, Ingrid
dc.contributor.authorDemeester, Piet
dc.date.accessioned2021-09-29T14:27:47Z
dc.date.available2021-09-29T14:27:47Z
dc.date.issued1996
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1210
dc.sourceIIOimport
dc.titleCharacterisation of 2% mismatched InGaAs layers, grown on different bufferlayers and at different growth temperatures
dc.typeOral presentation
dc.contributor.imecauthorMoerman, Ingrid
dc.contributor.imecauthorDemeester, Piet
dc.source.peerreviewno
dc.source.conferenceProceedings of the 8th International Conference on Metal Organic Vapour Phase Epitaxy; 9-13 June 1996; Cardiff, Wales, UK.
dc.source.conferencelocation
imec.availabilityPublished - imec


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