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Growth and reliability of 3nm N2O gate oxide

dc.contributor.authorNigam, Tanya
dc.contributor.authorDepas, Michel
dc.contributor.authorHeyns, Marc
dc.date.accessioned2021-09-29T15:14:23Z
dc.date.available2021-09-29T15:14:23Z
dc.date.issued1996
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1374
dc.sourceIIOimport
dc.titleGrowth and reliability of 3nm N2O gate oxide
dc.typeOral presentation
dc.contributor.imecauthorHeyns, Marc
dc.source.peerreviewno
dc.source.conference27th IEEE Semiconductor Interface Specialists Conference (SISC); December 5-7, 1996; San Diego, Calif., USA.
dc.source.conferencelocation
imec.availabilityPublished - imec


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