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Germanium and III-V for beyond-Si CMOS: channel materials and gate stacks

dc.contributor.authorCaymax, Matty
dc.date.accessioned2021-10-19T12:43:07Z
dc.date.available2021-10-19T12:43:07Z
dc.date.issued2011
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18648
dc.sourceIIOimport
dc.titleGermanium and III-V for beyond-Si CMOS: channel materials and gate stacks
dc.typeOral presentation
dc.contributor.imecauthorCaymax, Matty
dc.source.peerreviewno
dc.source.conference7th International Conference on Si Epitaxy and Heterostructures - ICSI-7
dc.source.conferencedate28/08/2011
dc.source.conferencelocationLeuven Belgium
imec.availabilityPublished - imec


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