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Design, fabrication and characterization of advanced field effect transistors with high-mobility channels and heterostructure confinement

dc.contributor.authorHellings, Geert
dc.date.accessioned2021-10-20T11:32:21Z
dc.date.available2021-10-20T11:32:21Z
dc.date.issued2012-03
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20795
dc.sourceIIOimport
dc.titleDesign, fabrication and characterization of advanced field effect transistors with high-mobility channels and heterostructure confinement
dc.typePHD thesis
dc.contributor.imecauthorHellings, Geert
dc.contributor.orcidimecHellings, Geert::0000-0002-5376-2119
dc.source.peerreviewno
dc.contributor.thesisadvisorDe Meyer, Kristin
imec.availabilityPublished - imec


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