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Tensile strained GeSn on Si by solid phase epitaxy for high mobility FET devices

dc.contributor.authorLieten, Ruben
dc.contributor.authorJevasuwan, Wipakorn
dc.contributor.authorUchida, Nori
dc.contributor.authorHattori, H.
dc.contributor.authorSeo, Jin Won
dc.contributor.authorLocquet, Jean-Pierre
dc.contributor.authorMaeda, Tatsuro
dc.date.accessioned2021-10-21T09:23:57Z
dc.date.available2021-10-21T09:23:57Z
dc.date.issued2013
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/22696
dc.sourceIIOimport
dc.titleTensile strained GeSn on Si by solid phase epitaxy for high mobility FET devices
dc.typeOral presentation
dc.contributor.imecauthorLieten, Ruben
dc.source.peerreviewno
dc.source.conferenceE-MRS Spring Meeting
dc.source.conferencedate27/05/2013
dc.source.conferencelocationStrasbourg France
imec.availabilityPublished - imec


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