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Creation and dissolution of oxygen related defects in czochralski grown silicon at high pressure - high temperatures

dc.contributor.authorMisiuk, A.
dc.contributor.authorVanhellemont, Jan
dc.contributor.authorClaeys, Cor
dc.contributor.authorHartwig, J.
dc.contributor.authorPrieur, E.
dc.contributor.authorDatsenko, L. Khrupa V.
dc.contributor.authorAntonova, I. V.
dc.contributor.authorBak-Misuk, J.
dc.date.accessioned2021-09-29T12:44:00Z
dc.date.available2021-09-29T12:44:00Z
dc.date.issued1994
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/260
dc.sourceIIOimport
dc.titleCreation and dissolution of oxygen related defects in czochralski grown silicon at high pressure - high temperatures
dc.typeOral presentation
dc.source.peerreviewno
dc.source.conference16th Conference on Applied Crystallography
dc.source.conferencedate22/08/1994
dc.source.conferencelocationCieszyn Poland
imec.availabilityPublished - imec


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