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A study of oxide defects in III-V MOS devices using electrical and mathematical methods

dc.contributor.authorVais, Abhitosh
dc.date.accessioned2021-10-23T15:48:08Z
dc.date.available2021-10-23T15:48:08Z
dc.date.issued2016-10
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/27423
dc.sourceIIOimport
dc.titleA study of oxide defects in III-V MOS devices using electrical and mathematical methods
dc.typePHD thesis
dc.contributor.imecauthorVais, Abhitosh
dc.contributor.orcidimecVais, Abhitosh::0000-0002-0317-7720
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.contributor.thesisadvisorDe Meyer, Kristin
dc.contributor.thesisadvisorCollaert, Nadine
imec.availabilityPublished - open access


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