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A ballistic electron-emission microscopy (BEEM)-investigation of the effects of chemical pretreatments on III-V semiconductor Schottky barriers

dc.contributor.authorVan Meirhaeghe, R.
dc.contributor.authorVanalme, G.
dc.contributor.authorGoubert, L.
dc.contributor.authorCardon, F.
dc.contributor.authorVan Daele, P.
dc.date.accessioned2021-10-01T09:22:04Z
dc.date.available2021-10-01T09:22:04Z
dc.date.issued1998
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/3062
dc.sourceIIOimport
dc.titleA ballistic electron-emission microscopy (BEEM)-investigation of the effects of chemical pretreatments on III-V semiconductor Schottky barriers
dc.typeOral presentation
dc.source.peerreviewno
dc.source.conferenceMRS Spring Meeting 1998. Symposium S: Nanoscale Characterization Using Scanning Probes; April 13-16, 1998; San Francisco, CA, US
dc.source.conferencelocation
imec.availabilityPublished - imec


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