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Selective isotropic etching of Group IV semiconductors to enable gate all around device architectures

dc.contributor.authorKal, Subhadeep
dc.contributor.authorPereira, Cheryl
dc.contributor.authorOniki, Yusuke
dc.contributor.authorHolsteyns, Frank
dc.contributor.authorSmith, Jeffrey
dc.contributor.authorMosden, Aelan
dc.contributor.authorKumar, Kaushik
dc.contributor.authorBiolsi, Peter
dc.contributor.authorHurd, Trace Q.
dc.date.accessioned2021-10-25T20:35:42Z
dc.date.available2021-10-25T20:35:42Z
dc.date.issued2018
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/30996
dc.sourceIIOimport
dc.titleSelective isotropic etching of Group IV semiconductors to enable gate all around device architectures
dc.typeMeeting abstract
dc.contributor.imecauthorOniki, Yusuke
dc.contributor.imecauthorHolsteyns, Frank
dc.contributor.imecauthorKumar, Kaushik
dc.contributor.orcidimecOniki, Yusuke::0000-0002-6619-1327
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.conferenceSurface Preparation and Cleaning Conference - SPCC
dc.source.conferencedate10/04/2018
dc.source.conferencelocationBoston, MA USA
imec.availabilityPublished - open access


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