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Using RESURF Technique for Edge Termination of Semi-Vertical GaN Devices

dc.contributor.authorBakeroot, Benoit
dc.contributor.authorGeens, Karen
dc.contributor.authorBorga, Matteo
dc.contributor.authorLiang, Hu
dc.contributor.authorYou, Shuzhen
dc.contributor.authorDecoutere, Stefaan
dc.date.accessioned2021-12-08T11:47:25Z
dc.date.available2021-11-02T16:00:07Z
dc.date.available2021-12-08T11:47:25Z
dc.date.issued2020
dc.identifier.issn2475-2916
dc.identifier.otherWOS:000669651600001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/37804.2
dc.sourceWOS
dc.titleUsing RESURF Technique for Edge Termination of Semi-Vertical GaN Devices
dc.typeProceedings paper
dc.contributor.imecauthorBakeroot, Benoit
dc.contributor.imecauthorGeens, Karen
dc.contributor.imecauthorBorga, Matteo
dc.contributor.imecauthorLiang, Hu
dc.contributor.imecauthorYou, Shuzhen
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecBakeroot, Benoit::0000-0003-4392-1777
dc.contributor.orcidimecGeens, Karen::0000-0003-1815-3972
dc.contributor.orcidimecBorga, Matteo::0000-0003-3087-6612
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.identifier.doi10.1109/ASDAM50306.2020.9393871
dc.identifier.eisbn978-1-7281-9776-0
dc.source.numberofpages4
dc.source.peerreviewyes
dc.source.beginpage1
dc.source.endpage4
dc.source.conference13th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM)
dc.source.conferencedateOCT 11-14, 2020
dc.source.conferencelocationSmolenice, Slovakia
dc.source.journalna
imec.availabilityPublished - imec


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220.500.12860/37804.2*2021-12-08T11:43:25Zvalidation by library/open access desk
120.500.12860/378042021-11-02T16:00:07Z

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