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Strain-Engineered MoTe2 Photodetector in Silicon Photonics at 1550 nm

dc.contributor.authorMaiti, R.
dc.contributor.authorPatil, C.
dc.contributor.authorXie, T.
dc.contributor.authorAzadani, J. G.
dc.contributor.authorAmin, R.
dc.contributor.authorMiscuglio, M.
dc.contributor.authorVan Thourhout, Dries
dc.contributor.authorLow, T.
dc.contributor.authorBank, S.
dc.contributor.authorSorger, V. J.
dc.date.accessioned2021-12-20T11:07:03Z
dc.date.available2021-11-02T16:05:07Z
dc.date.available2021-12-20T11:07:03Z
dc.date.issued2020
dc.identifier.issn2160-9020
dc.identifier.otherWOS:000612090003161
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/38192.2
dc.sourceWOS
dc.titleStrain-Engineered MoTe2 Photodetector in Silicon Photonics at 1550 nm
dc.typeProceedings paper
dc.contributor.imecauthorVan Thourhout, D.
dc.contributor.imecauthorVan Thourhout, Dries
dc.contributor.orcidimecVan Thourhout, Dries::0000-0003-0111-431X
dc.identifier.eisbn978-1-943580-76-7
dc.source.numberofpages2
dc.source.peerreviewyes
dc.source.conferenceConference on Lasers and Electro-Optics (CLEO)
dc.source.conferencedateMAY 10-15, 2020
dc.source.conferencelocationSan Jose
dc.source.journalna
imec.availabilityPublished - imec


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220.500.12860/38192.2*2021-12-20T11:05:29Zvalidation by library/open access desk
120.500.12860/381922021-11-02T16:05:07Z

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