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Strain-Engineered MoTe2 Photodetector in Silicon Photonics at 1550 nm

dc.contributor.authorMaiti, R.
dc.contributor.authorPatil, C.
dc.contributor.authorXie, T.
dc.contributor.authorAzadani, J. G.
dc.contributor.authorAmin, R.
dc.contributor.authorMiscuglio, M.
dc.contributor.authorVan Thourhout, D.
dc.contributor.authorLow, T.
dc.contributor.authorBank, S.
dc.contributor.authorSorger, V. J.
dc.date.accessioned2021-11-02T16:05:07Z
dc.date.available2021-11-02T16:05:07Z
dc.date.issued2020
dc.identifier.issn2160-9020
dc.identifier.otherWOS:000612090003161
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/38192
dc.sourceWOS
dc.titleStrain-Engineered MoTe2 Photodetector in Silicon Photonics at 1550 nm
dc.typeProceedings paper
dc.contributor.imecauthorVan Thourhout, D.
dc.identifier.eisbn978-1-943580-76-7
dc.source.numberofpages2
dc.source.peerreviewyes
dc.source.conferenceConference on Lasers and Electro-Optics (CLEO)
dc.source.conferencedateMAY 10-15, 2020
dc.source.conferencelocationSan Jose
imec.availabilityUnder review


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220.500.12860/38192.22021-12-20T11:05:29Zvalidation by library/open access desk
120.500.12860/38192*2021-11-02T16:05:07Z

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