Reversible dielectric breakdown in h-BN stacks: a statistical study of the switching voltages

Abstract

Memristor devices with the Au/Ag/h-BN/Fe structure have been fabricated and characterized. The switching voltages, and other newly-defined parameters extracted, like V-2dmax1 and V-2dmax2, have been analyzed statistically in an exhaustive manner. The conduction across the memristor can be described well with a Quantum Point Contact (QPC) model that accounts for quantized filamentary conduction. The distributions of set and reset voltages have been proved to be accurately reproduced by using Weibull distributions. We also present an analysis making use of phase-type distributions to characterize the measured data stochasticity.