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Buried Power Rail Scaling and Metal Assessment for the 3 nm Node and Beyond

dc.contributor.authorGupta, A.
dc.contributor.authorPedreira, O. Varela
dc.contributor.authorTao, Z.
dc.contributor.authorMertens, H.
dc.contributor.authorRadisic, D.
dc.contributor.authorJourdan, N.
dc.contributor.authorDevriendt, K.
dc.contributor.authorHeylen, N.
dc.contributor.authorWang, S.
dc.contributor.authorChehab, B.
dc.contributor.authorJang, D.
dc.contributor.authorHellings, G.
dc.contributor.authorSebaai, F.
dc.contributor.authorLorant, C.
dc.contributor.authorTeugels, L.
dc.contributor.authorPeter, A.
dc.contributor.authorChan, B. T.
dc.contributor.authorSchleicher, F.
dc.contributor.authorDemonie, I
dc.contributor.authorMarien, P.
dc.contributor.authorSepulveda, A.
dc.contributor.authorRichard, O.
dc.contributor.authorNagesh, N.
dc.contributor.authorLesniewska, A.
dc.contributor.authorLazzarino, F.
dc.contributor.authorRyckaert, J.
dc.contributor.authorMorin, P.
dc.contributor.authorAltamirano-Sanchez, E.
dc.contributor.authorMurdoch, G.
dc.contributor.authorBOmmels, J.
dc.contributor.authorDemuynck, S.
dc.contributor.authorNa, M. H.
dc.contributor.authorTokei, Z.
dc.contributor.authorBiesemans, S.
dc.contributor.authorLitta, E. Dentoni
dc.contributor.authorHoriguchi, N.
dc.date.accessioned2021-12-06T02:06:16Z
dc.date.available2021-12-06T02:06:16Z
dc.date.issued2020
dc.identifier.issn2380-9248
dc.identifier.otherWOS:000717011600081
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/38537
dc.sourceWOS
dc.titleBuried Power Rail Scaling and Metal Assessment for the 3 nm Node and Beyond
dc.typeProceedings paper
dc.contributor.imecauthorGupta, A.
dc.contributor.imecauthorPedreira, O. Varela
dc.contributor.imecauthorTao, Z.
dc.contributor.imecauthorMertens, H.
dc.contributor.imecauthorRadisic, D.
dc.contributor.imecauthorJourdan, N.
dc.contributor.imecauthorDevriendt, K.
dc.contributor.imecauthorHeylen, N.
dc.contributor.imecauthorWang, S.
dc.contributor.imecauthorChehab, B.
dc.contributor.imecauthorJang, D.
dc.contributor.imecauthorHellings, G.
dc.contributor.imecauthorSebaai, F.
dc.contributor.imecauthorLorant, C.
dc.contributor.imecauthorTeugels, L.
dc.contributor.imecauthorPeter, A.
dc.contributor.imecauthorChan, B. T.
dc.contributor.imecauthorSchleicher, F.
dc.contributor.imecauthorDemonie, I
dc.contributor.imecauthorMarien, P.
dc.contributor.imecauthorSepulveda, A.
dc.contributor.imecauthorRichard, O.
dc.contributor.imecauthorNagesh, N.
dc.contributor.imecauthorLesniewska, A.
dc.contributor.imecauthorLazzarino, F.
dc.contributor.imecauthorRyckaert, J.
dc.contributor.imecauthorMorin, P.
dc.contributor.imecauthorAltamirano-Sanchez, E.
dc.contributor.imecauthorMurdoch, G.
dc.contributor.imecauthorBOmmels, J.
dc.contributor.imecauthorDemuynck, S.
dc.contributor.imecauthorNa, M. H.
dc.contributor.imecauthorTokei, Z.
dc.contributor.imecauthorBiesemans, S.
dc.contributor.imecauthorLitta, E. Dentoni
dc.contributor.imecauthorHoriguchi, N.
dc.identifier.doi10.1109/IEDM13553.2020.9371970
dc.identifier.eisbn978-1-7281-8888-1
dc.source.numberofpages4
dc.source.peerreviewyes
dc.source.conferenceIEEE International Electron Devices Meeting (IEDM)
dc.source.conferencedateDEC 12-18, 2020
imec.availabilityUnder review


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220.500.12860/38537.22021-12-16T11:59:30Zvalidation by library/open access desk
120.500.12860/38537*2021-12-06T02:06:16Z

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