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dc.contributor.authorTokei, Zs
dc.contributor.authorVega, V.
dc.contributor.authorMurdoch, G.
dc.contributor.authorO'Toole, M.
dc.contributor.authorCroes, K.
dc.contributor.authorBaert, R.
dc.contributor.authorVan der Veen, M.
dc.contributor.authorAdelmann, C.
dc.contributor.authorSoulie, J. P.
dc.contributor.authorBoemmels, J.
dc.contributor.authorWilson, C.
dc.contributor.authorPark, S. H.
dc.contributor.authorSankaran, K.
dc.contributor.authorPourtois, G.
dc.contributor.authorSweerts, J.
dc.contributor.authorPaolillo, S.
dc.contributor.authorDecoster, S.
dc.contributor.authorMao, M.
dc.contributor.authorLazzarino, F.
dc.contributor.authorVersluijs, J.
dc.contributor.authorBlanco, V
dc.contributor.authorErcken, M.
dc.contributor.authorKesters, E.
dc.contributor.authorLe, Q-T
dc.contributor.authorHolsteyns, F.
dc.contributor.authorHeylen, N.
dc.contributor.authorTeugels, L.
dc.contributor.authorDevriendt, K.
dc.contributor.authorStruyf, H.
dc.contributor.authorMorin, P.
dc.contributor.authorJourdan, N.
dc.contributor.authorVan Elshocht, S.
dc.contributor.authorCiofi, I
dc.contributor.authorGupta, A.
dc.contributor.authorZahedmanesh, H.
dc.contributor.authorVanstreels, K.
dc.contributor.authorNa, M. H.
dc.date.accessioned2021-12-06T02:06:35Z
dc.date.available2021-12-06T02:06:35Z
dc.date.issued2020
dc.identifier.issn2380-9248
dc.identifier.otherWOS:000717011600015
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/38547
dc.sourceWOS
dc.titleInflection points in interconnect research and trends for 2nm and beyond in order to solve the RC bottleneck
dc.typeProceedings paper
dc.contributor.imecauthorTokei, Zs
dc.contributor.imecauthorVega, V.
dc.contributor.imecauthorMurdoch, G.
dc.contributor.imecauthorO'Toole, M.
dc.contributor.imecauthorCroes, K.
dc.contributor.imecauthorBaert, R.
dc.contributor.imecauthorVan der Veen, M.
dc.contributor.imecauthorAdelmann, C.
dc.contributor.imecauthorSoulie, J. P.
dc.contributor.imecauthorBoemmels, J.
dc.contributor.imecauthorWilson, C.
dc.contributor.imecauthorPark, S. H.
dc.contributor.imecauthorSankaran, K.
dc.contributor.imecauthorPourtois, G.
dc.contributor.imecauthorSweerts, J.
dc.contributor.imecauthorPaolillo, S.
dc.contributor.imecauthorDecoster, S.
dc.contributor.imecauthorMao, M.
dc.contributor.imecauthorLazzarino, F.
dc.contributor.imecauthorVersluijs, J.
dc.contributor.imecauthorBlanco, V
dc.contributor.imecauthorErcken, M.
dc.contributor.imecauthorKesters, E.
dc.contributor.imecauthorLe, Q-T
dc.contributor.imecauthorHolsteyns, F.
dc.contributor.imecauthorHeylen, N.
dc.contributor.imecauthorTeugels, L.
dc.contributor.imecauthorDevriendt, K.
dc.contributor.imecauthorStruyf, H.
dc.contributor.imecauthorMorin, P.
dc.contributor.imecauthorJourdan, N.
dc.contributor.imecauthorVan Elshocht, S.
dc.contributor.imecauthorCiofi, I
dc.contributor.imecauthorGupta, A.
dc.contributor.imecauthorZahedmanesh, H.
dc.contributor.imecauthorVanstreels, K.
dc.contributor.imecauthorNa, M. H.
dc.identifier.doi10.1109/IEDM13553.2020.9371903
dc.identifier.eisbn978-1-7281-8888-1
dc.source.numberofpages4
dc.source.peerreviewyes
dc.source.conferenceIEEE International Electron Devices Meeting (IEDM)
dc.source.conferencedateDEC 12-18, 2020
imec.availabilityUnder review


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