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dc.contributor.authorClima, Sergiu
dc.contributor.authorO'Sullivan, B. J.
dc.contributor.authorRonchi, N.
dc.contributor.authorBardon, M. G.
dc.contributor.authorBanerjee, K.
dc.contributor.authorVan den Bosch, G.
dc.contributor.authorPourtois, G.
dc.contributor.authorVan Houdt, J.
dc.date.accessioned2021-12-06T02:06:49Z
dc.date.available2021-12-06T02:06:49Z
dc.date.issued2020
dc.identifier.issn2380-9248
dc.identifier.otherWOS:000717011600218
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/38557
dc.sourceWOS
dc.titleFerroelectric Switching in FEFET: Physics of the Atomic Mechanism and Switching Dynamics in HfZrOx, HfO2 with Oxygen Vacancies and Si dopants
dc.typeProceedings paper
dc.contributor.imecauthorClima, Sergiu
dc.contributor.imecauthorO'Sullivan, B. J.
dc.contributor.imecauthorRonchi, N.
dc.contributor.imecauthorBardon, M. G.
dc.contributor.imecauthorBanerjee, K.
dc.contributor.imecauthorVan den Bosch, G.
dc.contributor.imecauthorPourtois, G.
dc.contributor.imecauthorVan Houdt, J.
dc.contributor.orcidimecClima, Sergiu::0000-0002-4044-9975
dc.identifier.doi10.1109/IEDM13553.2020.9372117
dc.identifier.eisbn978-1-7281-8888-1
dc.source.numberofpages4
dc.source.peerreviewyes
dc.source.conferenceIEEE International Electron Devices Meeting (IEDM)
dc.source.conferencedateDEC 12-18, 2020
imec.availabilityUnder review


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