Characterization of Doping and Activation Processes Using Differential Hall Effect Metrology (DHEM)

Abstract

Differential Hall Effect Metrology (DHEM) technique was used to study dopant activation in n-Si and p-SiGe materials. n-type Si samples were prepared by P ion implantation followed by RTA at temperatures ranging from 750ºC to 950ºC. Junction depth and dopant activation through the layers were correlated with process parameters. Using DHEM mobility profiles, a correlation was also established between the EOR defect location and their elimination through high temperature annealing. DHEM resistivity depth profile displayed increased resistivity in the surface region of B-doped SiGe (50%) epi layer. This electrical behavior is in excellent agreement with expected reduction in B incorporation as strain-relaxation occurs towards the free surface. These results demonstrate prime importance of DHEM capabilities for engineering of advanced contacts.