Recently added

Lane marking detection using LiDAR sensor

Ahmed, Ahmed; Ecklemann, Sven; Anwar, Ali; Hellinckx, Peter; Trautmann, Toralf (2020)

AlGaN/GaN MISHEMT analysis from an analog point of view up to 150 oC

Agopian, Paula G.D.; Martino, Joao A; Simoen, Eddy; Peralagu, Uthayasankaran; Parvais, Bertrand; Waldron, Niamh; Collaert, Nadine (2020)

Impact of gate dielectric material on basic parameters of MO(I)SHEMT devices

Agopian, Paula G.D.; Carmo, G.J.; Martino, J.A.; Simoen, Eddy; Collaert, Nadine (2020)

Analysis of one year of measurements in an RF-EMF sensor network in Antwerp, Belgium

Aerts, Sam; Vermeeren, Gunter; Van den Bossche, Matthias; Aminzadeh, Reza; Leroux, Philip; De Meyer, Mats; Bergs, Johan; Braem, Bart; Degreef, Gert; Philippron, Astrid; Martens, Luc; Wiart, Joe; Joseph, Wout (2020-06)

Design and validation of an in-situ measurement procedure for 5G NR base station RF-EMF exposure

Aerts, Sam; Verloock, Leen; Van den Bossche, Matthias; Colombi, Davide; Martens, Luc; Tornevik, Christer; Joseph, Wout (2020-06)

Combining TDoA and AoA with a particle filter in an outdoor LoRaWaN network

Aernouts, Michiel; Bni Lam, Noori; Podevijn, Nico; Plets, David; Joseph, Wout; Berkvens, Rafael; Weyn, Maarten (2020)

Simulating a combination of TDoA and AoA localization for LoRaWAN

Aernouts, Michiel; Bni Lam, Noori; Berkvens, Rafael; Weyn, Maarten (2020)

Characterization of interface interactions between Graphene and Ruthenium

Achra, Swati; Wu, Xiangyu; Trepalin, Vadim; Nuytten, Thomas; Ludwig, Jonathan; Brems, Steven; Afanasiev, Valeri; Huyghebaert, Cedric; Soree, Bart; Asselberghs, Inge; Tokei, Zsolt (2020)

Accuracy assessment between on product and on-optical-target overlay metrology with optical microscopy, SEM and STEM

Abranovitz, Yaniv; Levin, G.; Sarig, L.; Levi, S.; Adan, O.; Tilson, A.; Arjavac, J.; Strauss, M.; Kwakman, L.; Leray, Philippe; Halder, Sandip (2020)

Understanding the interaction mechanisms between amorphous carbon sacrificial patterning material and H2 plasma to enable area-selective ALD processes

Zyulkov, Ivan; Voronina, Ekaterina; Chan, BT; Rakhimova, Tatyana; De Gendt, Stefan; Armini, Silvia (2019)

Area-selective Ru-ALD by amorphous carbon modification using H radicals

Zyulkov, Ivan; Voronina,; Voloshin,; Chan, BT; Manchelevich,; Rachimova,; Armini, Silvia; De Gendt, Stefan (2019)

Self-assembled monolayers as ALD Ru growth inhibitor in an area-selective bottom-up metallization scheme

Zyulkov, Ivan; Madhiwala, Viraj; De Gendt, Stefan; Armini, Silvia (2019)

A low power time domain ECG interface based on flexible a-IGZO TFTs

Zulqarnain, Mohammad; Stanzione, Stefano; van der Steen, Jan-Laurens; Gelinck, Gerwin; Myny, Kris; Cantatore, Eugenio (2019)

A 22-29 GHz voltage-biased LC-VCO with suppressed flicker noise over tuning range in 22nm FD-SOI

Zong, Zhiwei; Mangraviti, Giovanni; Wambacq, Piet (2019)

Programmable Integrated Optical Signal Processors: Toward Next-Generation Signal Processing Engine in Communication Devices

Zhuang, Leimeng (2019)

Waveguide-enhanced raman spectroscopy using a mesoporous silica sorbent layer for volatile organic compound (VOC) sensing

Zhao, Haolan; Raza, Ali; Baumgartner, Bettina; Clemmen, Stephane; Lendl, Bernhard; Skirtach, Andre; Baets, Roel (2019)

Conference contributions: Recent submissions

Lane marking detection using LiDAR sensor

AlGaN/GaN MISHEMT analysis from an analog point of view up to 150 oC

Impact of gate dielectric material on basic parameters of MO(I)SHEMT devices

Analysis of one year of measurements in an RF-EMF sensor network in Antwerp, Belgium

Design and validation of an in-situ measurement procedure for 5G NR base station RF-EMF exposure

Combining TDoA and AoA with a particle filter in an outdoor LoRaWaN network

Simulating a combination of TDoA and AoA localization for LoRaWAN

Characterization of interface interactions between Graphene and Ruthenium

Accuracy assessment between on product and on-optical-target overlay metrology with optical microscopy, SEM and STEM

Understanding the interaction mechanisms between amorphous carbon sacrificial patterning material and H2 plasma to enable area-selective ALD processes

Area-selective Ru-ALD by amorphous carbon modification using H radicals

Self-assembled monolayers as ALD Ru growth inhibitor in an area-selective bottom-up metallization scheme

A low power time domain ECG interface based on flexible a-IGZO TFTs

A 22-29 GHz voltage-biased LC-VCO with suppressed flicker noise over tuning range in 22nm FD-SOI

Programmable Integrated Optical Signal Processors: Toward Next-Generation Signal Processing Engine in Communication Devices

Classification of multibeam sonar image using the Weyl transform

Total-ionizing-dose effects on InGaAs FinFETs with improved gate stack

200 mm industrial-ready dispersion-free GaN-on-Si buffer technology for 650 V rated power application

Dispersion-free low RF loss GaN-on-Si structures grown on 200 mm Si substrate using MOVPE

Waveguide-enhanced raman spectroscopy using a mesoporous silica sorbent layer for volatile organic compound (VOC) sensing

Conference contributions: Recent submissions

Lane marking detection using LiDAR sensor ﻿

AlGaN/GaN MISHEMT analysis from an analog point of view up to 150 oC ﻿

Impact of gate dielectric material on basic parameters of MO(I)SHEMT devices ﻿

Analysis of one year of measurements in an RF-EMF sensor network in Antwerp, Belgium ﻿

Design and validation of an in-situ measurement procedure for 5G NR base station RF-EMF exposure ﻿

Combining TDoA and AoA with a particle filter in an outdoor LoRaWaN network ﻿

Simulating a combination of TDoA and AoA localization for LoRaWAN ﻿

Characterization of interface interactions between Graphene and Ruthenium ﻿

Accuracy assessment between on product and on-optical-target overlay metrology with optical microscopy, SEM and STEM ﻿

Understanding the interaction mechanisms between amorphous carbon sacrificial patterning material and H2 plasma to enable area-selective ALD processes ﻿

Area-selective Ru-ALD by amorphous carbon modification using H radicals ﻿

Self-assembled monolayers as ALD Ru growth inhibitor in an area-selective bottom-up metallization scheme ﻿

A low power time domain ECG interface based on flexible a-IGZO TFTs ﻿

A 22-29 GHz voltage-biased LC-VCO with suppressed flicker noise over tuning range in 22nm FD-SOI ﻿

Programmable Integrated Optical Signal Processors: Toward Next-Generation Signal Processing Engine in Communication Devices ﻿

Classification of multibeam sonar image using the Weyl transform ﻿

Total-ionizing-dose effects on InGaAs FinFETs with improved gate stack ﻿

200 mm industrial-ready dispersion-free GaN-on-Si buffer technology for 650 V rated power application ﻿

Dispersion-free low RF loss GaN-on-Si structures grown on 200 mm Si substrate using MOVPE ﻿

Waveguide-enhanced raman spectroscopy using a mesoporous silica sorbent layer for volatile organic compound (VOC) sensing ﻿

Lane marking detection using LiDAR sensor

AlGaN/GaN MISHEMT analysis from an analog point of view up to 150 oC

Impact of gate dielectric material on basic parameters of MO(I)SHEMT devices

Analysis of one year of measurements in an RF-EMF sensor network in Antwerp, Belgium

Design and validation of an in-situ measurement procedure for 5G NR base station RF-EMF exposure

Combining TDoA and AoA with a particle filter in an outdoor LoRaWaN network

Simulating a combination of TDoA and AoA localization for LoRaWAN

Characterization of interface interactions between Graphene and Ruthenium

Accuracy assessment between on product and on-optical-target overlay metrology with optical microscopy, SEM and STEM

Understanding the interaction mechanisms between amorphous carbon sacrificial patterning material and H2 plasma to enable area-selective ALD processes

Area-selective Ru-ALD by amorphous carbon modification using H radicals

Self-assembled monolayers as ALD Ru growth inhibitor in an area-selective bottom-up metallization scheme

A low power time domain ECG interface based on flexible a-IGZO TFTs

A 22-29 GHz voltage-biased LC-VCO with suppressed flicker noise over tuning range in 22nm FD-SOI

Programmable Integrated Optical Signal Processors: Toward Next-Generation Signal Processing Engine in Communication Devices

Classification of multibeam sonar image using the Weyl transform

Total-ionizing-dose effects on InGaAs FinFETs with improved gate stack

200 mm industrial-ready dispersion-free GaN-on-Si buffer technology for 650 V rated power application

Dispersion-free low RF loss GaN-on-Si structures grown on 200 mm Si substrate using MOVPE

Waveguide-enhanced raman spectroscopy using a mesoporous silica sorbent layer for volatile organic compound (VOC) sensing