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Total Ionizing Dose Effects of n-FinFET Transistor in iN14 Technology

dc.contributor.authorArtola, L.
dc.contributor.authorChiarella, T.
dc.contributor.authorNuns, T.
dc.contributor.authorCussac, G.
dc.contributor.authorMitard, J.
dc.date.accessioned2022-06-25T02:28:42Z
dc.date.available2022-06-25T02:28:42Z
dc.date.issued2021
dc.identifier.issn2154-0519
dc.identifier.otherWOS:000802055000024
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/40023
dc.sourceWOS
dc.titleTotal Ionizing Dose Effects of n-FinFET Transistor in iN14 Technology
dc.typeProceedings paper
dc.contributor.imecauthorChiarella, T.
dc.contributor.imecauthorMitard, J.
dc.identifier.doi10.1109/NSREC45046.2021.9679337
dc.identifier.eisbn978-1-6654-4205-3
dc.source.numberofpages7
dc.source.peerreviewyes
dc.source.beginpage118
dc.source.endpage124
dc.source.conferenceIEEE Nuclear and Space Radiation Effects Conference (NSREC) / IEEE Radiation Effects Data Workshop (REDW)
dc.source.conferencedateJUL 17-23, 2021
imec.availabilityUnder review


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220.500.12860/40023.22022-06-28T08:04:17Zvalidation by library/open access desk
120.500.12860/40023*2022-06-25T02:28:42Z

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