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dc.contributor.authorBastos, J. P.
dc.contributor.authorO'Sullivan, B. J.
dc.contributor.authorFranco, J.
dc.contributor.authorTyaginov, S.
dc.contributor.authorTruijen, B.
dc.contributor.authorChasin, A.
dc.contributor.authorDegraeve, R.
dc.contributor.authorKaczer, B.
dc.contributor.authorRitzenthaler, R.
dc.contributor.authorCapogreco, E.
dc.contributor.authorLitta, E. D.
dc.contributor.authorSpessot, A.
dc.contributor.authorHigashi, Y.
dc.contributor.authorYoon, Y.
dc.contributor.authorMachkaoutsan, V.
dc.contributor.authorFazan, P.
dc.contributor.authorHoriguchi, N.
dc.date.accessioned2023-02-27T03:27:53Z
dc.date.available2023-02-27T03:27:53Z
dc.date.issued2022
dc.identifier.issn1541-7026
dc.identifier.otherWOS:000922926400119
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/41151
dc.sourceWOS
dc.titleBias Temperature Instability (BTI) of High-Voltage Devices for Memory Periphery
dc.typeProceedings paper
dc.contributor.imecauthorBastos, J. P.
dc.contributor.imecauthorO'Sullivan, B. J.
dc.contributor.imecauthorFranco, J.
dc.contributor.imecauthorTyaginov, S.
dc.contributor.imecauthorTruijen, B.
dc.contributor.imecauthorChasin, A.
dc.contributor.imecauthorDegraeve, R.
dc.contributor.imecauthorKaczer, B.
dc.contributor.imecauthorRitzenthaler, R.
dc.contributor.imecauthorCapogreco, E.
dc.contributor.imecauthorLitta, E. D.
dc.contributor.imecauthorSpessot, A.
dc.contributor.imecauthorHigashi, Y.
dc.contributor.imecauthorYoon, Y.
dc.contributor.imecauthorMachkaoutsan, V.
dc.contributor.imecauthorFazan, P.
dc.contributor.imecauthorHoriguchi, N.
dc.identifier.doi10.1109/IRPS48227.2022.9764547
dc.identifier.eisbn978-1-6654-7950-9
dc.source.numberofpages6
dc.source.peerreviewyes
dc.source.conferenceIEEE International Reliability Physics Symposium (IRPS)
dc.source.conferencedateMAR 27-31, 2022
dc.source.conferencelocationDallas
imec.availabilityUnder review


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