Impact of the channel doping on the low-frequency noise of gate-all-around silicon vertical nanowire pMOSFETs

Abstract

In this work, the impact of the channel doping density on the low-frequency noise of silicon Gate-All-Around (GAA) Vertical Nanowire (VNW) pMOSFETs on Silicon-on-Insulator (SOI) substrates will be described and discussed. It is demonstrated that the dominant fluctuation mechanism of the 1/f noise in the subthreshold regime changes from number (& UDelta;n) to mobility (& UDelta;& mu;) fluctuations with increasing p-type doping density of the silicon nanowires. At the same time, the lowest input-referred voltage noise Power Spectral Density is observed for an intermediate boron concentration in the nanowire of 5 x 1018 cm-3.