Overview of scalable transfer approaches to enable epitaxial 2D material integration

Abstract

Direct two-dimensional (2D) material growth is widely considered as the preferred 2D integration approach due to its simplicity and cost-effective fabrication flow. On the other hand, a 2D transfer route enables full wafer-scale integration of epitaxial 2D material and can facilitate new device possibilities. However, the transfer of a wafer size atomically thick 2D material from a growth to a device wafer often seems an impossible hurdle to overcome, since a 2D material is strongly influenced by strain and its surroundings. Moreover, the stability of some of these 2D materials is a concern as several are prone to oxidation. Here, an overview is given of the current state-of-the-art 2D material transfer techniques and an outlook is presented to improve these transfer processes further to achieve a reliable FAB compatible epitaxial 2D transfer.