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CMOS Device Scaling by Nanosheet Channel Architectures and New Channel Materials
| dc.contributor.author | Horiguchi, Naoto | |
| dc.date.accessioned | 2023-08-24T17:41:48Z | |
| dc.date.available | 2023-08-24T17:41:48Z | |
| dc.date.issued | 2023 | |
| dc.identifier.issn | 2161-4636 | |
| dc.identifier.other | WOS:001035434300001 | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/42389 | |
| dc.source | WOS | |
| dc.title | CMOS Device Scaling by Nanosheet Channel Architectures and New Channel Materials | |
| dc.type | Proceedings paper | |
| dc.contributor.imecauthor | Horiguchi, Naoto | |
| dc.contributor.orcidimec | Horiguchi, Naoto::0000-0001-5490-0416 | |
| dc.identifier.eisbn | 978-4-86348-808-3 | |
| dc.source.numberofpages | 2 | |
| dc.source.peerreview | yes | |
| dc.source.beginpage | 1 | |
| dc.source.endpage | 2 | |
| dc.source.conference | 26th Silicon Nanoelectronics Workshop (SNW) | |
| dc.source.conferencedate | JUN 11-12, 2023 | |
| dc.source.conferencelocation | Kyoto | |
| imec.availability | Under review |
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