Selectivity tuning by Peroxide concentration for the selective etching of SiGe20 to Si and SiGe40 to SiGe20

dc.contributor.author	Lopez Villanueva1, Francisco Javier
dc.contributor.author	Altamirano Sanchez, Efrain
dc.date.accessioned	2025-02-10T13:31:27Z
dc.date.available	2023-09-17T23:21:02Z
dc.date.available	2025-02-10T13:31:27Z
dc.date.issued	2023-04-19
dc.identifier.issn	1662-9779, Vol. 346, pp 29-33
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/42556.2
dc.title	Selectivity tuning by Peroxide concentration for the selective etching of SiGe20 to Si and SiGe40 to SiGe20
dc.type	Proceedings paper
dc.contributor.imecauthor	Altamirano Sanchez, Efrain
dc.contributor.orcidimec	Altamirano Sanchez, Efrain::0000-0003-3235-6055
dc.date.embargo	9999-12-31
dc.identifier.doi	10.4028/p-Vl0z4a
dc.source.numberofpages	5
dc.source.peerreview	yes
dc.source.beginpage	29
dc.source.endpage	33
dc.source.conference	UCPSS - 16th International Symposium on Ultra Clean Processing of Semiconductor Surfaces
dc.source.conferencedate	11-13 Sept 2023
dc.source.conferencelocation	Brugge
dc.source.journal	Solid State Phenomena; Vol. 346
imec.availability	Published - imec

Version	Item	Date	Summary
2	20.500.12860/42556.2*	2025-02-10T13:24:32Z	validation by library/open access desk
1	20.500.12860/42556	2023-09-17T23:21:02Z

Version history