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Properties of electron traps generated in the gate oxide

dc.contributor.authorZhang, Wenqi
dc.contributor.authorZhang, Jenny
dc.contributor.authorLalor, M.
dc.contributor.authorBurton, D.
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorDegraeve, Robin
dc.date.accessioned2021-10-14T18:31:52Z
dc.date.available2021-10-14T18:31:52Z
dc.date.issued2001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/5873
dc.sourceIIOimport
dc.titleProperties of electron traps generated in the gate oxide
dc.typeOral presentation
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorDegraeve, Robin
dc.source.peerreviewno
dc.source.conferenceSISC-Conference; December 2001; Washington, D.C.
dc.source.conferencelocation
imec.availabilityPublished - imec


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