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Fabrication of Pseudomorphic AlGaAs/InGaAs HEMTs Using CH4/H2 RIE for Gate Recessing

dc.contributor.authorPereira, Ricardo
dc.contributor.authorVan Hove, Marleen
dc.contributor.authorVan Rossum, Marc
dc.date.accessioned2021-09-29T13:15:42Z
dc.date.available2021-09-29T13:15:42Z
dc.date.issued1995
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/819
dc.sourceIIOimport
dc.titleFabrication of Pseudomorphic AlGaAs/InGaAs HEMTs Using CH4/H2 RIE for Gate Recessing
dc.typeOral presentation
dc.source.peerreviewno
dc.source.conference10th Congress of the Brazilian Microelectronics Society - 1st Ibero American Microelectronics Conference; 1995; Canela, Brazil.
dc.source.conferencelocation
imec.availabilityPublished - imec


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