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Which defect breaks down gate oxides?

dc.contributor.authorZhang, W.D.
dc.contributor.authorZhang, J.F.
dc.contributor.authorZhao, C.Z.
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorDegraeve, Robin
dc.date.accessioned2021-10-15T07:58:12Z
dc.date.available2021-10-15T07:58:12Z
dc.date.issued2003
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/8436
dc.sourceIIOimport
dc.titleWhich defect breaks down gate oxides?
dc.typeOral presentation
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorDegraeve, Robin
dc.source.peerreviewno
dc.source.conferenceSemiconductor Interface Specialists Conference (SISC)
dc.source.conferencedate4/12/2003
dc.source.conferencelocationWashington USA
imec.availabilityPublished - imec


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