Transistor Layout and Technology Impacts on ESD HBM Performance of GaN-on-SiC RF HEMTs

dc.contributor.author	Wu, Wei-Min
dc.contributor.author	Chen, Shih-Hung
dc.contributor.author	Yan, Dongyang
dc.contributor.author	Parvais, Bertrand
dc.contributor.author	Collaert, Nadine
dc.date.accessioned	2025-06-05T09:33:08Z
dc.date.available	2024-12-01T23:12:00Z
dc.date.available	2025-06-05T09:33:08Z
dc.date.issued	2024
dc.identifier.isbn	979-8-3503-6546-7
dc.identifier.issn	0739-5159
dc.identifier.other	WOS:001337944800020
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/44881.2
dc.source	WOS
dc.title	Transistor Layout and Technology Impacts on ESD HBM Performance of GaN-on-SiC RF HEMTs
dc.type	Proceedings paper
dc.contributor.imecauthor	Wu, Wei-Min
dc.contributor.imecauthor	Chen, Shih-Hung
dc.contributor.imecauthor	Yan, Dongyang
dc.contributor.imecauthor	Parvais, Bertrand
dc.contributor.imecauthor	Collaert, Nadine
dc.contributor.orcidimec	Wu, Wei-Min::0000-0002-8390-6785
dc.contributor.orcidimec	Chen, Shih-Hung::0000-0002-6481-2951
dc.contributor.orcidimec	Yan, Dongyang::0000-0002-2048-3762
dc.contributor.orcidimec	Parvais, Bertrand::0000-0003-0769-7069
dc.contributor.orcidimec	Collaert, Nadine::0000-0002-8062-3165
dc.identifier.eisbn	978-1-58537-353-6
dc.source.numberofpages	8
dc.source.peerreview	yes
dc.source.conference	46th Annual Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD)
dc.source.conferencedate	SEP 16-18, 2024
dc.source.conferencelocation	Reno
dc.source.journal	N/A
imec.availability	Published - imec

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Version	Item	Date	Summary
2	20.500.12860/44881.2*	2025-06-05T09:32:02Z	validation by library/open access desk
1	20.500.12860/44881	2024-12-01T23:12:00Z