Transistor Layout and Technology Impacts on ESD HBM Performance of GaN-on-SiC RF HEMTs

Abstract

This work investigates HBM performance in GaN-on-SiC RF HEMTs. Forward and reverse G-S Schottky diodes are evaluated in RF multi- finger HEMTs with different widths and using inside or outside through-substrate vias (TSVs). HBM zaps on D-S HEMTs are conducted. Finally, benchmarks with GaN-on-Si HEMTs are proposed in terms of G-S Schottky diodes and D-S HEMTs.