Recently added

End of the roadmap of CMOS devices

Jurczak, Gosia (2004)

InGaAs on GaAs based sensors for infrared sensing applications up to 2.3 μm

John, Joachim; Zimmermann, Lars; Degroote, Stefan; Borghs, Gustaaf; Van Hoof, Chris; Nemeth, Stefan; Colin, Thierry; Hooylaerts, Peter (2004)

Dislocation nucleation and movement in helium implanted SiGe/Si(001)Heterostructures studied by in-situ TEM

Hueging, N.; Luysberg, M.; Urban, K.; Buca, D.; Holländer, B.; Mantl, S.; Morschbacher, M.; Fichner, P.F.P.; Loo, Roger; Caymax, Matty (2004)

Characterization of ultrathin high-k HfO2 layers grown on silicon: influence of the deposition parameters and interfacial layer

Houssiau, L.; Vitchev, R.G.; Pireaux, J.-J.; Conard, Thierry; Bender, Hugo (2004)

Defect generation in high-k gate dielectric stacks under electrical stress: the impact of hydrogen

Houssa, Michel; Heyns, Marc; Stesmans, Andre (2004)

Electrical characteristics of Ge/GeOx(N)/HfO2 gate stacks

Houssa, Michel; De Jaeger, Brice; Delabie, Annelies; Van Elshocht, Sven; Afanasiev, Valeri; Autran, J.L.; Stesmans, Andre; Meuris, Marc; Heyns, Marc (2004)

Reaction-dispersive H+ transport model for NBTI in pMOSFETs

Houssa, Michel; Aoulaiche, Marc; De Gendt, Stefan; Stesmans, Andre; Groeseneken, Guido; Heyns, Marc (2004)

Electrical characteristics of high-k based MOS devices

Houssa, Michel (2004)

Megasonics: a cavitation driven process

Holsteyns, Frank; Lee, Kuntack; Graf, S.; Palmans, Roger; Vereecke, Guy; Mertens, Paul (2004)

Strain relaxation of pseudomorphic Si1-xGex/Si(100) heterostructures by Si+ ion implantation

Holländer, B.; Buca, D.M.; Lenk, S.; Mantl, S.; Herzog, H.J.; Hackbarth, T.; Loo, Roger; Caymax, Matty; Mörschbächer, M.; Fichtner, P.F.P. (2004)

Validatie van methoden voor metaalcontaminatie analysemethoden op halfgeleidersubstraten

Hellin, David; Rip, Jens; Arnauts, Sophia; Mertens, Paul; De Gendt, Stefan; Vinckier, Chris (2004)

VPD-DC-TXRF for metallic contamination analysis of Ge wafers

Hellin, David; Geens, Veerle; Teerlinck, Ivo; Van Steenbergen, Jan; Raskin, Geoffroy; Mertens, Paul; De Gendt, Stefan; Vinckier, Chris (2004)

A Ge matrix removal method for metallic contamination analysis on Ge wafers using TXRF

Hellin, David; Geens, Veerle; Teerlinck, Ivo; Rip, Jens; Theuwis, Antoon; De Gendt, Stefan; Vinckier, Chris (2004)

Saturation effects in TXRF on micro-droplet residues

Hellin, David; De Gendt, Stefan; Mertens, Paul; Vinckier, Chris (2004)

Self assembled airgap structures

Gueneau de Mussy, Jean Paul; Beyer, Gerald; Maex, Karen (2004)

Resist evaluation using EUV interference lithography

Gronheid, Roel; Van Roey, Frieda; Goethals, Mieke; Leunissen, Peter; Van Steenwinckel, David; Solak, H.H. (2004)

Influence of top electrode deposition conditions on the reliability of integrated SBT ferroelectric capacitors

Goux, Ludovic; Xu, Zhen; Paraschiv, Vasile; Schwitters, M.; Lisoni, Judit; Maes, David; Haspeslagh, Luc; Groeseneken, Guido; Zambrano, R.; Wouters, Dirk (2004)

Influence of metal and SBT dry-etch on FeCAP properties and role of recovery anneals

Goux, Ludovic; Paraschiv, Vasile; Boullart, Werner; Lisoni, Judit; Schwitters, M.; Maes, David; Haspeslagh, Luc; Wouters, Dirk; Caputa, Concetta; Casella, P.; Zambrano, R.; Vecchio, G.; Monchoix, H. (2004)

Ferroelectric properties and reliability of sidewall SBT in integrated 3D FeCAPs

Goux, Ludovic; Menou, N.; Lisoni, Judit; Schwitters, M.; Paraschiv, Vasile; Maes, David; Zhen, X.; Kaczer, Ben; Haspeslagh, Luc; Wouters, Dirk; Muller, C.; Caputa, C.; Zambrano, R. (2004)

Influence du procédé de dépôt de l'électrode supérieure sur la fiabilité de condensateurs ferroélectriques intégrés à base de SBT

Goux, Ludovic (2004)

Presentations: Recent submissions

End of the roadmap of CMOS devices ﻿

InGaAs on GaAs based sensors for infrared sensing applications up to 2.3 μm ﻿

Dislocation nucleation and movement in helium implanted SiGe/Si(001)Heterostructures studied by in-situ TEM ﻿

Characterization of ultrathin high-k HfO2 layers grown on silicon: influence of the deposition parameters and interfacial layer ﻿

Defect generation in high-k gate dielectric stacks under electrical stress: the impact of hydrogen ﻿

Electrical characteristics of Ge/GeOx(N)/HfO2 gate stacks ﻿

Reaction-dispersive H+ transport model for NBTI in pMOSFETs ﻿

Electrical characteristics of high-k based MOS devices ﻿

Megasonics: a cavitation driven process ﻿

Strain relaxation of pseudomorphic Si1-xGex/Si(100) heterostructures by Si+ ion implantation ﻿

Validatie van methoden voor metaalcontaminatie analysemethoden op halfgeleidersubstraten ﻿

VPD-DC-TXRF for metallic contamination analysis of Ge wafers ﻿

A Ge matrix removal method for metallic contamination analysis on Ge wafers using TXRF ﻿

Saturation effects in TXRF on micro-droplet residues ﻿

Self assembled airgap structures ﻿

Resist evaluation using EUV interference lithography ﻿

Influence of top electrode deposition conditions on the reliability of integrated SBT ferroelectric capacitors ﻿

Influence of metal and SBT dry-etch on FeCAP properties and role of recovery anneals ﻿

Ferroelectric properties and reliability of sidewall SBT in integrated 3D FeCAPs ﻿

Influence du procédé de dépôt de l'électrode supérieure sur la fiabilité de condensateurs ferroélectriques intégrés à base de SBT ﻿